中国电力

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高压大功率IGBT器件用6kV/180°C高温反偏测试装备研制

邓二平1,孟鹤立2,王延浩1,赵志斌2,黄永章3   

  1. 1. 华北电力大学(北京)
    2. 华北电力大学
    3. (新能源电力系统国家重点实验室(华北电力大学),北京 102206)
  • 收稿日期:2019-06-06 修回日期:2019-08-13 出版日期:2019-11-17 发布日期:2019-11-17
  • 通讯作者: 邓二平
  • 基金资助:
    内蒙古自治区高等学校科学研项目

6kV/180°C High Temperature Reverse Bias Test Equipment for High Voltage and High Power IGBTs

  • Received:2019-06-06 Revised:2019-08-13 Online:2019-11-17 Published:2019-11-17

摘要: 高温反偏测试(High Temperature Reverse Bias,HTRB)作为功率器件可靠性测试的重要环节,其测试装置的精度和功能决定了对被测器件老化程度判定的准确性。针对高压大功率器件对测试装置空间、精度以及可靠性的需求,自主研制出了电压等级6kV、环境温度180℃的高温反偏测试装置。此外,本测试装置还集成了温度-漏电流关系曲线自动测量及失效期数据高频采集等功能,得以更为准确灵活地监测被测器件的状态以进行可靠性评估与失效分析。为验证该测试装置的各项功能及可靠性,使用该装置对商业IGBT器件进行了测试,初步测试结果表明,温度与漏电流呈指数关系,集射极漏电流随着老化的进行逐渐增大。该装置符合高压大功率半导体器件对高温反偏测试的需求且适用于不同封装的IGBT器件。

Abstract: High Temperature Reverse Bias (HTRB) test is an important part in reliability tests on IGBTs. The accuracy and function of the test equipment determine the accuracy of the performance monitoring of the device under test. Meeting the requirements of space, accuracy and reliability for test equipment, HTRB test equipment with voltage level of 6kV and ambient temperature of 180°C was independently built for high voltage and high power devices. Further, the test equipment integrates some functions such as automatic measurement of temperature-drain current relationship curve and high-frequency acquisition of failure data, which can better monitor the state of the device under test for reliability evaluation and failure analysis. The equipment is testing some commercial IGBTs, getting the relationship curve of leakage current–temperature and aging time–leakage current. Leakage current–temperature curve is an exponential function and aging time–leakage current curve is increasing slowly. This equipment realizes the test requirement of high voltage and high power devices, suiting for the different packages of IGBTs.